NLM Photonics and LIGENTEC have achieved a first, fabricating Silicon Nitride Organic Hybrid (NOH) modulators on a commercial photonics platform, the company says. Unlike silicon, which limits operation to telecom wavelengths, the use of silicon nitride extends transparency into the visible spectrum, opening possibilities for visible wavelength sensing and quantum photonics.

These proof-of-concept devices demonstrate a new path for integrating active components onto silicon nitride, requiring adapted processes for metallization, organic electro-optic deposition, and poling. “This collaboration is a key milestone in developing commercial NOH PICs,” said Dr. Lewis Johnson, co-founder and CTO of NLM Photonics.

Silicon Nitride Integration Enables Visible Spectrum Organic Hybrid Modulators

The fabrication process required adapting several key steps, including metallization, organic electro-optic (OEO) deposition, and poling, specifically for the unique properties of silicon nitride. This achievement builds on LIGENTEC’s established expertise in low-loss photonic integrated circuits, initially focused on quantum technologies like photonic qubit routing and quantum key distribution.

Founded in 2016 as a spin-off from EPFL, the company has expanded its platform beyond silicon nitride to include thin-film lithium niobate and III-V materials, all integrated on a 200 mm CMOS-compatible process. A partnership with X-FAB, expanded in January 2026, further strengthens LIGENTEC’s manufacturing capabilities, allowing for scaling of thin-film lithium niobate on both silicon nitride and silicon-on-insulator substrates.

The resulting hybrid modulators utilize NLM Photonics’ OEO materials, known for their high electro-optic efficiency and tunability, applied as back-end-of-line steps to the silicon nitride platform, according to the company. “Now, we are jointly advancing integrated photonics once again,” said Kevin McComber, CEO of Spark Photonics, who collaborated on the modulator design. “This collaboration significantly lowers the barrier to entry for building efficient, high-speed active devices at wavelengths where traditional silicon cannot compete.” The initial proof-of-concept devices demonstrate the feasibility of this integration approach. According to Dr.