Institute Team Demonstrates Voltage-Driven Spin Control

Researchers at the Institute for Quantum Computing and the Department of Electrical and Computer Engineering, led by Dr. Guo-Xing Miao, have demonstrated a method for manipulating electron spin using principles analogous to rechargeable ionic battery technology. This all-solid-state ionic gating technique achieves reversible, voltage-driven control of spin channels at low voltages (1-3 volts), offering an alternative to traditional spintronic methods reliant on substantial electric currents. The team’s approach facilitates direct integration with complementary metal-oxide-semiconductor (CMOS) circuits, potentially enabling more energy-efficient and sustainable electronic systems by overcoming limitations inherent in current spintronic devices.

Researchers are developing more intelligent electronic devices, including smartphones, wearable technology, and smart home systems, with a focus on improved energy efficiency and performance. Dr. Guo-Xing Miao of the Institute for Quantum Computing and the Department of Electrical and Computer Engineering, alongside his team, has demonstrated a method for manipulating spin properties in electronics that is compatible with existing manufacturing processes. This work centres on spintronics, or spin electronics, which studies and controls electron spin for both quantum and conventional information processing.

Traditionally, spintronics relies on substantial electric currents to generate the magnetic fields or spin torques necessary for spin manipulation, resulting in considerable energy dissipation and system overhead, particularly in complex materials such as strongly correlated systems, two-dimensional materials, and heterostructures. Miao’s team has adopted an alternative approach, utilising principles from rechargeable ionic battery technology to achieve efficient, reversible, and voltage-driven control of spin channels through all-solid-state ionic gating. This technique allows for the manipulation of spin states and facilitates their direct integration into complementary metal-oxide-semiconductor (CMOS) circuits, the foundation of modern integrated circuits, representing progress in solid state spintronics.

Solid-state ionic control, operating at low voltages (1-3 volts), offers a more energy-efficient method for tuning materials and unlocking novel behaviours, while simultaneously ensuring compatibility with contemporary integrated circuit technology. This approach potentially overcomes limitations in current spintronic devices and enables the development of more sustainable and powerful electronic systems.